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| Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 APPLICATIONSL TO-220F High-Speed Switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature----------- 55~150ae Tj PD Operating Junction Temperature ------ 150ae --- 1D G 2D D 3D S Allowable Power Dissipation c=25ae ------T (c) 23W Drain-Source Voltage ------------600V Gate-Source Voltage ------------ 30V VDSS VGSS ID Drain Current T c=25ae------- --2.0A (c) - -- - ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 600 10 2.0 3.8 2.05 180 20 4.3 9 25 24 28 8.5 1.3 4.1 2.0 1. 4 5.5 235 25 3 28 60 58 66 12 A 100 4.0 5.0 V ID=250|I ,VGS=0V A |I VDS =600V GS=0 A V nA V VGS=A , VDS =0V 30V VDS = VGS , ID =250|I A * | VGS=10V, ID =1.0A S VDS = 40V , ID =1.0A pF pF pF nS nS nS nS nC nC nC VDS =25V, VGS=0,f=1MHz Fall Time Total Gate Charge Gate- Source Charge Gate- Drain Charge VDD =300V, ID =2A (*aO ) RG= 25 | * VDS =480V VGS =10V ID =2A * Continuous Source Current A V ae /W IS =2.0A , VGS=0 Diode Forward Voltage Thermal Resistance Rth j-c(c) Junction-to-Case *Pulse Test Pulse WidthU 300|I Duty CycleU s 2% Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 |
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